1Department of Electrical and Electronic Engineering, Jessore University of Science and Technology, Jessore, Bangladesh
2Department of Electrical and Electronic Engineering, Bangabandhu Sheikh Mujibur Rahman University of Science and Technology, Gopalgonj, Bangladesh
3Department of Electrical and Electronic Engineering, Pabna University of Science and Technology, Pabna, Bangladesh
4Department of EEE, Rajshahi University of Engineering & Technology, Rajshahi, 6204, Rajshahi, Bangladesh
*Corresponding Email: mahossain.eee@gmail.com
Online published on 11 April, 2017.
A fundamental limitation in achieving ultra-high efficiency solar cells (> 50%) is the availability of materials and corresponding device structures. The InGaN material system offer substantial potential in developing ultra-high efficiency devices, both because of measurements indicating that the band gap on InN is lower than previously though and also due to other unique material properties, such as the strong polarization and affiliation piezoelectric effects. Several key issues remain, including p-type doping, which substrates to use, and the material quality of the layers. Results show that the material quality of existing films allows a 5 stack tandem at 500X to approach 50%. Results also show InN grown on Ge with a crystalline Al interlayer, which could be used to replace a tunnel contact. High band gap GaN p-i-n and InGaN/GaN quantum dot solar cells are fabricated, showing good spectral response and Voc > 2V Abstract should be in 50 words (Times New Roman, Bold, 10).
Solar energy, High efficiency, Quantum dot, InN
