Effects of Metal Gate Electrode and HfO₂ in Junction less Vertical Double Gate MOSFET

In this paper, we propose a novel design analysis for a Junctionless Double Gate Vertical MOSFET (JLVMOS) with metal gate electrode and HfO2, for which the simulations have been performed using TCAD (ATLAS), The simulated results exhibits significant improvements in comparison to conventional JLVMOS device with a polysilicon gate electrode and ITRS values for different node technology. In place of polysilicon gate and SiO2 we have used metal gate and hafnium dioxide (HfO2) respectively and observed that metal gate electrode with HfO2 in JLVMOS shows drain current is 1.77 mA, for a gate voltage of 1V and an average subthreshold swing, DIBL (Drain Induced Barrier Lowering) effect and leakage current are 61.01mV per decade, 40.4mV/V and 1.4nA/μm respectively. This significant improvement in drain current can be exploited for various low power highperformance circuit applications.