1Département de Physique, Faculté des Sciences et Techniques, Laboratoires des Semiconducteurs et d’énergie Solaire (LASES-SOLMATS), University Cheikh Anta Diop-Dakar-SENEGAL
2Département de Physique, Faculté des Sciences et Techniques, Laboratoire de Mécanique des Fluides, Hydraulique et Transferts, University Cheikh Anta Diop-Dakar-SENEGAL
Online published on 6 March, 2017.
In this work, the author made a numerical modeling of the capacitance of an inorganic semiconductor silicon in the presence of excitons. The model obtained allowed him to calculate a average temperature, concentrations of carriers (electrons and excitons) and capacitance. The motivation of the author is firstly to show the effects of the average temperature and secondly those of heat. To perform such work, the author chose the finite volume method as a method of solving physical problems.
Excitons, Capacitance, Surface conversion of excitons, Average temperature
