1Department of Electronic Science, University of Calcutta, 92, A.P.C. Road, Kolkata-700009, India
2Department of Electronic Science, National Institute of Technology, Yupia, Arunachal Pradesh-79112, India
*E-mail: Bhowal.mithun@gmail.com
Online published on 11 October, 2017.
We report on the growth of InPBi and GaSbBi epitaxial layers by liquid phase epitaxy. Photoluminescence measurements showed a bandgap reduction of 55 meV for InPBi and 24 meV for GaSbBi due to the incorporation of Bi in the III-V lattice.
III-V-Bi, Photoluminescence, liquid phase epitaxy
