1Department of Physics, Presidency University, Kolkata, India
2Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, Kolkata, India
*E-mail: arabinda.physics@presiuniv.ac.in
Online published on 11 October, 2017.
Thin films of ZnSnP2 have been successfully grown on P-type Si(100) by e-beam evaporation technique. A detailed x-ray reflectivity analysis of the films has been carried out. Distorted Wave Born Approximation has been used to simulate the experimental result to find out the variation of electron density with depth of the film. Interdiffusion between ZnSnP2 and native SiO2 layers is observed in the electron density profile.
ZnSnP2 thin film, Electron beam evaporation, Electron density profile
