Study of Resistivity and Energy Band Gap of Semiconducting Materials

In this paper, we have reported on resistivity and energy band gap of semiconductors. According to the band theory of solids, insulators and semiconductors are materials which possess an energy band gap at the fermi level. Thus, these materials have a completely filled energy band below the gap and an empty band above the gap. Electrical resistivity is a basic material property that quantifies a material's opposition to current flow; it is the inversely proportional to conductivity. The resistivity of a material depends upon some factors, those factors are material doping, processing and environmental factors such as, temperature and humidity. The resistivity of the material can affect the characteristics of a device of which it is made, such as the threshold voltage, series resistance, capacitance and other parameters. The present work is the analysis of experimental data of resistivity and energy band gap of semiconducting materials. Determining the resistivity of a material is common in both research and fabrication environments. There are many methods for determining the resistivity of a material, but these techniques are depending upon the type of material. One of the most common methods for finding the resistivity of semiconducting materials is four probe methods. In this paper, we have reported experimental data of resistivity and energy band gap on semiconducting material. The energy band gap in semiconducting material was found by plotting the relationship between the temperature and voltage for the constant current. Within the precision of our experiment, the results obtained are in good agreement with the known value energy band gap in semiconducting material. The temperature dependence of energy band gap for semiconducting material has also been studied.