1Department of Physics, Gurukula Kangri University, Haridwar - 249 404
2Department of Electronic Science, University of Delhi South Campus, New Delhi - 110 021
3School of Engineering & Technology, Sharda University, Greater Noida - 2013 06, U.P.
*E-mail: rammehra2003@yahoo.com
Online published on 10 August, 2015.
Zinc Oxide (ZnO) thin films were deposited on glass by sol-gel method. Zinc acetate dehydrate, methanol and monoethanolamine were used as a Zinc source materials, solvent and stabilizer, respectively. ZnO films have been annealed at different temperature ranging from 350°C to 550°C. An X-ray diffractometer (XRD) was used to investigate the structural properties of the ZnO films. Crystallite size of ZnO is varying from 18 to 30 nm with change annealing temperature. A Scanning emission microscopy (SEM) was used to confirmed surface morphologies of ZnO films. The lowest sheet resistance was found to be 89.29Ω/Sq. at annealing temperature 450°C. Sheet resistance is found to increase with increase in grain size. The band gap energy exhibits red shift from 3.26 to 3.22 eV with increase in annealing temperature.
Sol-gel, sheet resistance, annealing temperature, figure of merit
