Properties of Hydrogenated Amorphous Silicon Thin Films Deposited by PECVD

Hydrogenated amorphous silicon (a-Si:H) film is most suitable material for optoelectronics application. Stability and high deposition rate are important issues for this material. It is always emphasized that high rate should be achieved with retaining its device quality properties. A systematic study of high rate deposited hydrogenated amorphous silicon by Plasma Enhance Chemical vapour deposition (PECVD) technique have been made. Normally device quality Hydrogenated amorphous silicon (a-Si:H) films are deposited at very low power. Our aim is to deposit this material at high growth rate by applying high power density to cathode. The refractive index, extension coefficient, energy band gap with various thickness of thin film are investigated using Manificier et al method. The structure of material is given by X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM).