Fabrication and Optimization of Au-(n) InSb Schottky Barrier Junction

n- type indium antimonide (n-InSb) films were successfully fabricated on glass substrate by thermal evaporation technique. The morphology and resistivity and carrier concentration of the film were characterized by scanning electron microscope and four probe technique respectively. The values of resistivity and carrier concentration were evaluated as ρ = 33.8072 x 10⁻⁵ ohm - cm and n =1.0746 x 10¹⁸/cm³. Schottky barrier junction of (n) InSb thin films have been fabricated with Au and Al electrodes onto precleaned amorphous glass substrate by sequential thermal evaporation process at a base pressure of 5x10⁻⁵ torr. The electrical analysis of Au-(n)InSb structure has been investigated by means of current - voltage measurements at room temperature in dark condition. The fabricated junction exhibited rectifying nature of junction indicates the presence of barrier between Au and n-type InSb films. From the current voltage characteristics, the different junction parameters such as ideality factor, saturation current density, barrier height etc. were measured by applying a thermionic emission theory. The values of ideality factor for Au- (n) InSb/Al was evaluated as 1.46 was good as these factors are not much departed from unity and the barrier height was 0.47 eV for Au- (n)InSb/Al. The saturation current densities were found 40 x l0⁻³ amp/cm² for Au-(n) InSb/Al.