Role of High-k Materials in Nanoscale TM-DG MOSFET: A Simulation Study

Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. The high-k dielectric materials as Si₃N₄ (ε=7.5), HfO₂ (ε=20) and TiO₂ (ε=40) is sandwiched over a low-k SiO₂ (ε=3.9) layer. We investigated the parametrs like Surface Potential, Electric field in the channel, Sub threshold Swing (SS), Drain Induced Barrier Lowering (DIBL), Transconductance (g_m), on current (I_on), leakage current off current (I_off) for TM-DG and TM-GS-DG and a close comparison is made between them. The ability of suppressing the short channel effects (SCEs) in case of TM-GS-DG over TM-DG MOSFET is also discussed in this paper. The simulation and parameter extraction have been done by using the commercially available device simulation software ATLAS^TM.