1Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi-110 021
2Department of Physics, Motilal Nehru College, University of Delhi, New Delhi-110 021
3Department of Electronic & Communication, Engineering Maharaja Agrasen College, I.P. University, New Delhi
*E-mail: puja510@gmail.com
Online published on 5 August, 2015.
In this work an analytical model has been developed for Dual Metal Gate Surrounded MOSFET. This model is based on unified charge control model derived from Poisson's equation. Results show the impact of applied voltages on drain current, transconductance and drain conductance. An excellent agreement between analytically and simulated results are found which validates the model.
Device modeling, dual metal gate (DMG), short channel effect (SCE), surrounded gate MOSFET (SGT)
