Invertis Journal of Science & Technology
  • Year: 2013
  • Volume: 6
  • Issue: 4

Analytical I-V Model for Dual Metal Gate Surrounded MOSFET

  • Author:
  • Pujarini Ghosh1,, Subhasis Haldar2, R.S. Gupta3, Mridula Gupta1
  • Total Page Count: 5
  • Page Number: 200 to 204

1Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi-110 021

2Department of Physics, Motilal Nehru College, University of Delhi, New Delhi-110 021

3Department of Electronic & Communication, Engineering Maharaja Agrasen College, I.P. University, New Delhi

*E-mail: puja510@gmail.com

Online published on 5 August, 2015.

Abstract

In this work an analytical model has been developed for Dual Metal Gate Surrounded MOSFET. This model is based on unified charge control model derived from Poisson's equation. Results show the impact of applied voltages on drain current, transconductance and drain conductance. An excellent agreement between analytically and simulated results are found which validates the model.

Keywords

Device modeling, dual metal gate (DMG), short channel effect (SCE), surrounded gate MOSFET (SGT)