CMOS Compatible RF MEMS Based FBAR for Wireless Applications: Design, Model and Simulation

This paper presents the design and finite element 3-D analysis of a CMOS compatible thin film bulk wave resonators (FBARs) consisting zinc oxide (ZnO) with top and bottom electrodes of aluminum (Al). FBARs can be realized by CMOS compatible bulk micromachining process followed by deposition of piezoelectric layer sandwiched by two electrodes. This 3-D analysis has been carried out using finite element method (FEM) based CoventorWare™ tool. In our analysis we have investigated the series and parallel resonances and harmonic response with extraction of equivalent circuit element. The proposed FBAR has been studied for S-band operation.