1Department of Physics, Assam Engineering institute, Guwahati (Assam)
2Department of Physics, Cotton College, Guwahati (Assam)
3Department of Physics, Gauhati University, Guwahati (Assam)
*E-mail: tapankachari@yahoo.co.in
Online published on 5 August, 2015.
The forward bias current-voltage (I-V) characteristics of vacuum deposited Sn/(p)Bi2S3 metal semiconductor (MS) Schottky diodes have been studied at room temperature and elevated temperatures. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Different junction-parameters such as ideality factors, band gap, short-circuit current, open circuit voltage, fill factor, efficiency etc. have been determined from I-V characteristics of the junction. The ideality factor n and series resistance Rs was found to decrease and zero bias barrier height Φb found to remain more or less constant with the increase of temperature in (308–328)K range. Proper doping, annealing and hydrogenation are necessary to reduce the series resistance so as to achieve high conversion efficiency of the junction. More works are being carried out in this direction.
Photovoltaic effect, ideality factors, band gap, fill factor, Schottky diodes, series resistance
