1Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science and Technology, Hisar (Haryana)
2Department of Computer Science Engineering, Krishna Institute of Engineering and Technology, Ghaziabad (U.P.)
An analytical model to evaluate current-voltage characteristics, small-signal parameters and noise property for AlGaN/GaN high electron mobility transistor is presented. The influence of drain current, frequency and device parameters on noise figure has been studied. The effect of parasitic source and gate resistances has also incorporated to obtain the minimum noise figure. The effect of gate length on the gate voltage behaviour of the noise coefficients P, R and C is also studied which play a vital role in the determination of other important noise performance parameters. The obtained results of device performance are compared with experimental data and shows good agreement. The results show that AlGaN/GaN pHEMTs are attractive to both high power and low noise microwave source applications.
pHEMT, charge-control, drain noise, gate noise, correlation coefficient, noise figure
