Fabrication and Characterization of SnSeTe Thin Films and their Schottky Diodes

Thin films of SnSeTe alloy have been deposited on soda lime glass substrate at 323K as well as 503K by thermal evaporation technique in a vacuum coating unit. Films deposited at 503K were found to be of polycrystalline nature with preferred orientation along (121) planes on the basis of the X-ray studies while the surface morphology studied on the basis of scanning electron microscopy (SEM) revealed the films to be homogenous over the entire coverage area. The films deposited at 503K was found to possess optical band gap ∼ 0.8eV and demonstrated its use for various optoelectronic device applications. Ag/p-SnSeTe Schottky diodes were fabricated by depositing silver dots of the areas 9x10⁻², 9x10⁻³ and 6x10⁻³ cm² over 400nm SnSeTe films deposited on Al coated glass substrates. The fabricated schottky diodes were undertaken for current-voltage (I-V) and capacitance-voltage (C-V) behaviour.