Investigating the Effect of Buried Oxide (Box) in the Drift Region of a Super Junction Mosfet

In this paper, we propose a new SJMOSFET (Super junction MOSFET) with buried oxide in its drift region. The proposed device is simulated using PISCES-II, a 2-D numerical device simulator. The results show an improvement in the breakdown performance as compared to the conventional SJMOSFET due to a reduction in the vertical electric field. In addition, the proposed device i.e. in NBOX1-SJMOSFET shows a linear relation between the B_v and R_on as compared to the conventional device. Various results obtained reveal that the device having BOX in the n-pillar gives the better results. The breakdown voltage has been increased by about 20.439% in NBOX1-SJMOSFET leading to improvement in various other performance parameters with BOX in the n-pillar as compared to BOX in the p-pillar and conventional device.