This paper presents modelling, design and fabrication scheme of a 12 GHz silicon micromachined cavity filter for high unloaded quality factor (Qu). Bulk micromachining and wafer bonding techniques are adopted for realization of the structures. Cavities are formed on 1000 μm thick high resistivity waferusing Tetramethyl Ammonium Hydroxide (TMAH) followed by gold electroplating. RF feed is provided to the cavity through metal transmission lines and slot apertures on standard high resistivity Si wafer. The simulated results show a return loss of-37.30dB, insertion loss of-0.16dB and unloaded quality factor of 300.
Cavity filter, unloaded quality factor, etching, micromachined cavities, TMAH
