Correction of SNM (Static Noise Margin) of SRAM Using BTI (Bias Temperature Instability) Sensor

The continuous scaling of CMOS (Complementary Metal-Oxide-semiconductor) technology exponentially increases the power density per unit area (means temperature) and other effects such as lifetime reliability. Bias temperature instability (BTI) is the serious effect which originates due to scaling of MOS, the effect of BTI on the design of SRAM (Static Random-Access Memory); it decreases the static noise margin (SNM) of the SRAM. In this paper, a prototype BTI sensor is proposed, which is used for correction of SNM of SRAM. It is designed on 15 nm technology and simulated in Hspice in Cadence 6.15; the precision found after simulation is under 1.15 mV (±3% approx) for 1-V supply.