Chemical vapor deposition of copper using argon as carrier gas

Chemical Vapor Deposition (CVD) of copper was carried out using copper (II) acetylacetonate as the precursor material with Argon as the carrier gas. The instrumentation of CVD process has been presented. The deposition of copper on aluminium was carried out at different temperatures at a rate of 50cc/sec of carrier gas and at a vapourising temperature of 200–210°C of the precursor. XRD and electrical resistance of the deposits were reported. SEM and AFM studies were used to examine the morphology of the deposits.